Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/

Paper Title Page

Authors: Sudip K. Mazumder, Tirthajyoti Sarkar

Abstract: Hybrid SiC pulsed-power switch (having bipolar transistor structure) with 5 kV breakdown voltage and 1 kA peak current rating has been...

Authors: Philip G. Neudeck, David J. Spry, Andrew J. Trunek, Laura J. Evans, Liang Yu Chen, Gary W. Hunter, D. Androjna

Abstract: This paper reports on initial results from the first device tested of a “second generation” Pt-SiC Schottky diode hydrogen gas sensor that:...

Authors: Jun Hu, Xiao Bin Xin, Petre Alexandrov, Jian H. Zhao, Brenda L. VanMil, D. Kurt Gaskill, Kok Keong Lew, Rachael L. Myers-Ward, Charles R. Eddy

Abstract: This paper reports a 4H-SiC single photo avalanche diode (SPAD) operating at the solar blind wavelength of 280 nm. The SPAD has an...

Authors: W.S. Loh, J.P.R. David, Stanislav I. Soloviev, H.Y. Cha, Peter M. Sandvik, J.S. Ng, C. Mark Johnson

Abstract: The hole dominated avalanche multiplication characteristics of 4H-SiC Separate Absorption and Multiplication avalanche photodiodes...

Authors: Stanislav I. Soloviev, Peter M. Sandvik, Alexey Vertiatchikh, K. Dovidenko, Ho Young Cha

Abstract: In this work, we observed and investigated electro-luminescence (EL) from defects in 4H-SiC avalanche photodiodes. The EL irradiance...

Authors: Antonella Sciuto, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri

Abstract: The Schottky barrier lowering in 4H-SiC interdigit Schottky-type UV photodiode is investigated in the presence of a thermally grown oxide...

Authors: Alexander M. Ivanov, Nikita B. Strokan, Alexander A. Lebedev, Vitalii V. Kozlovski

Abstract: P+–n–n+-detector structures based on CVD films with an uncompensated donor concentration of 2×1014 cm-3 have been studied. The p+-region...

Authors: Shin Ichi Kinouchi, Hiroshi Nakatake, T. Kitamura, S. Azuma, S. Tominaga, Shuhei Nakata, Yukiyasu Nakao, T. Oi, Tatsuo Oomori

Abstract: A compact SiC converter having power densities about 9 W/cm3 is designed and fabricated. It is confirmed that the converter operates in a...

Authors: Bang Hung Tsao, Jacob Lawson, James D. Scofield, Clinton Laing, Jeffery Brown

Abstract: Three dimensional models of both single-chip and multiple-chip power sub-modules were generated using ANSYS in order to simulate the...

Authors: Bruno Burger, Dirk Kranzer, Olivier Stalter

Abstract: The new MOSFET-generation with SiC-materials seems well suited for power electronic converters up to 1200 V operating-voltage, and...


Showing 291 to 300 of 330 Paper Titles