Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/

Paper Title Page

Authors: Koji Yano, Yasunori Tanaka, Tsutomu Yatsuo, Akio Takatsuka, Mitsuo Okamoto, Kazuo Arai

Abstract: The turnoff mechanism of SiC buried gate static induction transistors (SiC-BGSITs) were analyzed by three dimensional device simulation. A...

Authors: David J. Spry, Philip G. Neudeck, Liang Yu Chen, Glenn M. Beheim, Robert S. Okojie, Carl W. Chang, Roger D. Meredith, Terry L. Ferrier, Laura J. Evans

Abstract: This paper reports on the fabrication and testing of 6H-SiC junction field effect transistors (JFETs) and a simple differential amplifier...

Authors: Amita Patil, Xiao An Fu, Philip G. Neudeck, Glenn M. Beheim, Mehran Mehregany, Steven Garverick

Abstract: This paper presents silicon carbide sensor interface circuits and techniques for MEMSbased sensors operating in harsh environments. More...

Authors: Igor Sankin, Volodymyr Bondarenko, David C. Sheridan, Michael S. Mazzola, Jeff B. Casady, John Fraley, Marcelo Schupbach

Abstract: SiC Lateral Trench JFET (LTJFET) technology is demonstrated as a promising candidate for use in high-temperature wireless telemetry...

Authors: Y. Zhang, Kuang Sheng, Ming Su, Jian H. Zhao, Petre Alexandrov, Leonid Fursin

Abstract: A series of high voltage (HV) and low voltage (LV) lateral JFETs are successfully developed in 4H-SiC based on the vertical channel LJFET...

Authors: Kazuhiro Fujikawa, Kenichi Sawada, Takashi Tsuno, Hideto Tamaso, Shin Harada, Yasuo Namikawa

Abstract: 400V/2.5A 4H-SiC JFETs having a reduced surface field (RESURF) structure were fabricated. Measurements on the static and switching...

Authors: Xiao An Fu, Amita Patil, Philip G. Neudeck, Glenn M. Beheim, Steven Garverick, Mehran Mehregany

Abstract: This paper reports fabrication and electrical characterization of 6H-SiC n-channel, depletion-mode, junction-field-effect transistors...

Authors: Per Åke Nilsson, Mattias Sudow, Fredrik Allerstam, Kristoffer Andersson, Einar Ö. Sveinbjörnsson, Hans Hjelmgren, Niklas Rorsman

Abstract: Silicon Carbide MESFETs for microwave frequencies were made using a field-plated buried gate approach. The devices were fabricated using...

Authors: S. Katakami, Shuichi Ono, Manabu Arai

Abstract: We fabricated a 0.5-μm-gate MESFET on a bulk 4H-SiC semi-insulating substrate using ion implantation for the channel and contact regions....

Authors: Orest J. Glembocki, Joshua D. Caldwell, Jeffrey A. Mittereder, Jeffrey P. Calame, Steven C. Binari, Robert E. Stahlbush

Abstract: Confocal μ-Raman was used to measure the operating temperatures in SiC MESFETS, AlGaN/GaN/SiC HEMT’s and 4H-SiC PiN diodes. Temperatures...


Showing 261 to 270 of 330 Paper Titles