Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/www.scientific.net/MSF.600-603

Paper Title Page

Authors: Pavel A. Ivanov, Igor V. Grekhov

Abstract: High-voltage (900 V) 4H-SiC Schottky-barrier diodes (SBD) terminated with guard pnjunction were fabricated and investigated. The guard...

955
Authors: In Ho Kang, Jae Yeol Song, Sung Jae Joo, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim

Abstract: The effect of the doping concentration and space of both p-grid and FLR on the electrical performances of 4H-SiC JBS diode has been...

959
Authors: Shin Harada, Yasuo Namikawa, Ryuichi Sugie

Abstract: Two types of structures related to in-grown SF having a different influence on reverse currents of 4H-SiC SBDs were investigated. One type...

963
Authors: Mitsutaka Nakamura, Yoshikazu Hashino, Tomoaki Furusho, Hiroyuki Kinoshita, Hiromu Shiomi, Masahiro Yoshimoto

Abstract: The effects of basal-plane defects on the performance of 4H-SiC Schottky diodes using a Ni electrode are demonstrated. Systematic...

967
Authors: Ho Keun Song, Jong Ho Lee, Myeong Sook Oh, Jeong Hyun Moon, Han Seok Seo, Jeong Hyuk Yim, Sun Young Kwon, Hyeong Joon Kim

Abstract: Schottky barrier diode (SBD) was fabricated by MOCVD using bistrimethylsilylmethane (BTMSM, C7H20Si2) precursor. The 4H-SiC substrates...

971
Authors: Masaaki Tomita, Yusuke Maeyama, M. Sato, Y. Fukuda, F. Honma, J. Ono, Masaaki Shimizu, Hiroaki Iwakuro

Abstract: We report that it seems to be necessary to select Bologna University mobility model for accurate transient phenomenon analysis of SiC-SBD...

975
Authors: Kenichi Kuroda, Yoshinori Matsuno, Kenichi Ohtsuka, Naoki Yutani, Shozo Shikama, Hiroaki Sumitani

Abstract: The forward current density-voltage (JF-VF) characteristics of SiC Schottky barrier diodes (SBDs) with an epilayer thickness between 9.6...

979
Authors: Gheorghe Brezeanu, M. Brezeanu, C. Boianceanu, F. Udrea, G.A.J. Amaratunga, Phillippe Godignon

Abstract: This paper presents a comparison between SiC and diamond Schottky barrier diodes using the oxide ramp termination. The influences of the...

983
Authors: A. Kumta, E. Rusli, J.H. Xia

Abstract: Silicon dioxide (SiO2), one of the commonly used dielectrics for field plate terminated 4H-SiC devices suffers from high electric field and...

987
Authors: Pierre Brosselard, Nicolas Camara, Jawad ul Hassan, Xavier Jordá, Peder Bergman, Josep Montserrat, José Millan

Abstract: An innovative process has been developed by Linköping University to prepare the 4HSiC substrate surface before epitaxial growth. The...

991

Showing 231 to 240 of 330 Paper Titles