Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/

Paper Title Page

Authors: Kenichi Ohtsuka, Yoichiro Tarui, Tomokatsu Watanabe, Keiko Fujihira, Yoshinori Matsuno

Abstract: Forward voltage of SiC pin diodes is evaluated by device simulation, where a p-type contact is described by Schottky barrier to a p-type...

Authors: Shinobu Onoda, Takeshi Ohshima, Toshio Hirao, Shigeomi Hishiki, Naoya Iwamoto, Kazu Kojima, K. Kawano

Abstract: Transient currents in 6H-SiC n+p diodes and those in Si PIN diodes are compared, and the carrier dynamic response to a heavy ion collision...

Authors: Naoya Iwamoto, Shinobu Onoda, Shigeomi Hishiki, Takeshi Ohshima, Makoto Murakami, I. Nakano, K. Kawano

Abstract: 6H-SiC n+p diodes fabricated on a p-type epitaxial layer were irradiated with 1MeV-electrons at fluences up to 6×1016 cm-2 to clarify their...

Authors: Victor Veliadis, Ty McNutt, Megan McCoy, Harold Hearne, Gregory De Salvo, Chris Clarke, Paul Potyraj, Charles Scozzie

Abstract: High-voltage normally-on VJFETs of 0.19 cm2 and 0.096 cm2 areas were manufactured in seven photolithographic levels with no epitaxial...

Authors: Lin Cheng, P. Martin, Michael S. Mazzola, David C. Sheridan, R.L. Kelly, Volodymyr Bondarenko, S. Morrison, R. Gray, G. Tian, James D. Scofield, Janna R. B. Casady, Jeff B. Casady

Abstract: In this work we report the most recent high-temperature long-term reliability results of the 600 V/14 A, 4H-SiC vertical-channel junction...

Authors: Lin Cheng, Igor Sankin, Volodymyr Bondarenko, Michael S. Mazzola, James D. Scofield, David C. Sheridan, P. Martin, Janna R. B. Casady, Jeff B. Casady

Abstract: In this work we have demonstrated the high-temperature operations of 600 V/50 A 4HSiC vertical-channel junction field-effect transistors...

Authors: Haruka Shimizu, Yasuo Onose, Tomoyuki Someya, Hidekatsu Onose, Natsuki Yokoyama

Abstract: We developed normally-off 4H-SiC vertical junction field effect transistors (JFETs) with large current density. The effect of forming an...

Authors: Konstantin Vassilevski, Keith P. Hilton, Nicolas G. Wright, Michael J. Uren, A.G. Munday, Irina P. Nikitina, A.J. Hydes, Alton B. Horsfall, C. Mark Johnson

Abstract: Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers....

Authors: Rajesh Kumar Malhan, S.J. Rashid, Mitsuhiro Kataoka, Yuuichi Takeuchi, Naohiro Sugiyama, F. Udrea, G.A.J. Amaratunga, T. Reimann

Abstract: Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated....

Authors: Yasunori Tanaka, Koji Yano, Mitsuo Okamoto, Akio Takatsuka, Kazuo Arai, Tsutomu Yatsuo

Abstract: We have succeeded to fabricate SiC buried gate static induction transistors (BGSITs) with the breakdown voltage VBR of 1270 V at the gate...


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