Ultra Clean Processing of Semiconductor Surfaces IX

Volumes 145-146

doi: 10.4028/www.scientific.net/SSP.145-146

Paper Title Page

Authors: G. Mannaert, L. Witters, Denis Shamiryan, Werner Boullart, K. Han, S. Luo, A. Falepin, R. Sonnemans, Ivan L. Berry, Carlo Waldfried

Abstract: The most advanced technology nodes require ultra shallow extension implants (low energy) which are very vulnerable to ash related substrate...

Authors: Alice C. Elbaz, Enrico Bellandi, Cinzia De Marco, Luigi M. Avaro, Enrica Ravizza, Roberta Piva, Mauro Alessandri
Authors: Andreas V. Kadavanich, Sang Hoon Shim, Harry M. Meyer, Stephen E. Savas, Edgar Lara-Curzio

Abstract: Photoresist stripping after ion implantation at high dosages (>1E15 atoms/cm2) is the most challenging dry strip process for advanced logic...

Authors: Andrey Zakharov, Markus Lenski, Sven Metzger, Christian Krüger

Abstract: A layer of hardened material (crust) forms on the surface of photo resist (PR) during the implantation. This crust can be described as...

Authors: Y.J. Kim, J.H. Lee, K.J. Seo, C.R. Yoon, E.S. Roh, J.K. Cho, T. Hattori

Abstract: Stripping high-dose ion-implanted (HDI) photoresists is considered as one of the most challengeable processes in the semiconductor...

Authors: Toshiyuki Sanada, Masao Watanabe, Atsushi Hayashida, Yoichi Isago

Abstract: It is well-known that ion-implant doses greater than 5E14 atoms/cm2 can create an amorphous carbon-like layer “crust”, and also that this...

Authors: David DeKraker, Blake Pasker, Jeffery W. Butterbaugh, Kurt K. Christenson, Thomas J. Wagener

Abstract: Photoresist stripping in IC manufacturing has become more challenging as the number of photoresist levels has increased while at the same...

Authors: Eric J. Bergman, J. Dusty Leonhard

Abstract: Ion implantation is one of many critical processes in the fabrication of semiconductor devices. While device geometries have been...

Authors: Masayuki Wada, Kenichi Sano, James Snow, Rita Vos, L.H.A. Leunissens, Paul W. Mertens, Atsuro Eitoku

Abstract: The introduction of metal gates and high-k dielectrics in FEOL and porous ULK dielectrics in BEOL presents severe issues [1] and leads to...

Authors: Stéphane Malhouitre, Rita Vos, Souvik Banerjee, Paul Cheng, Twan Bearda, Paul W. Mertens

Abstract: In FEOL processing, doping of active areas like source, drain, and extensions (NMOS and PMOS) is done by ion implantation. Un-doped regions...


Showing 61 to 70 of 91 Paper Titles