Ultra Clean Processing of Semiconductor Surfaces IX

Volumes 145-146

doi: 10.4028/www.scientific.net/SSP.145-146

Paper Title Page

Authors: Yi Wei Chen, Nien Ting Ho, Jerander Lai, T.C. Tsai, C.C. Huang, S.F. Tzou, James M.M. Chu

Abstract: NiPt self-aligned silicide (salicide) has become a major candidate for the 45nm node due to its better thermal stability and the surface...

Authors: Masayuki Wada, Sylvain Garaud, I. Ferain, Nadine Collaert, Kenichi Sano, James Snow, Rita Vos, L.H.A. Leunissens, Paul W. Mertens, Atsuro Eitoku

Abstract: High-k gate dielectrics (HK), such as HfO2 or HfSiON, are being considered as the gate dielectric option for the 45nm node and beyond. In...

Authors: Philippe Garnier, B. Pernet, Y. Gomez, C. Duluard, Alphonse Torres, David Barge, M. Gatefait, Didier Lévy

Abstract: Integrating multiple gate oxides on a same die requires a proper definition of their respective active area (fig. 1). First the thick gate...

Authors: W. Sievert, K.U. Zimmermann, B. Hartmann, C. Klimm, K. Jacob, Heike Angermann
Authors: Suguru Saito, Yoshiya Hagimoto, Hayato Iwamoto, Yusuke Muraki

Abstract: Recently, plasma-less gaseous etching processes have attracted attention for their interesting etching properties. Previously, we reported...

Authors: P. Roman, K. Torek, K. Shanmugasundaram, P. Mumbauer, D. Vestyk, P. Hammond, Jerzy Ruzyllo

Abstract: The process in which anhydrous HF (AHF) is mixed with the vapor of an organic solvent for the purpose of etching of native SiO2 on Si...

Authors: Jae Hyun Bae, Jae Mok Jung, Kwon Taek Lim

Abstract: In this work, we studied HF/scCO2 dry etching processes with various co-solvents for the purpose of reducing the residues. The effect of...

Authors: Steven Verhaverbeke
Authors: Brian K. Kirkpatrick, James J. Chambers, Steven L. Prins, Deborah J. Riley, Wei Ze Xiong, Xin Wang

Abstract: As semiconductor technology moves past the 32nm CMOS node, material loss becomes an ever more important topic. Besides impacting the size...

Authors: Ke Ping Han, S. Luo, O. Escorcia, Carlo Waldfried, Ivan L. Berry

Abstract: High dose, ultra shallow junction implant resist strip requires minimal substrate loss and dopant loss. Silicon recess (silicon loss) under...


Showing 51 to 60 of 91 Paper Titles