Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Patrick Fiorenza, Jean Lorenzzi, Gabriel Ferro, Vito Raineri

Abstract: This paper reports on the electrical characteristics of thermally grown SiO2 on cubic silicon carbide (3C-SiC). The 3C-SiC (111) was grown...

Authors: Way Foong Lim, Kuan Yew Cheong, Zainovia Lockman, Farah Ainis Jasni, Hock Jin Quah

Abstract: Electrical properties of MOD-derived CeO2 film deposited on n-type 4H-SiC have been investigated. Post-deposition annealing of the oxide was...

Authors: Manuel Hofer, Thomas Stauden, Ivo W. Rangelow, Jörg Pezoldt

Abstract: In this work nanostructures based on a 30 nm thick 3C-SiC (100) heteroepitaxially grown on Si(100) are demonstrated. They consist of free...

Authors: Marcel Placidi, Amador Pérez-Tomás, Phillippe Godignon, Narcis Mestres, Gabriel Abadal, Thierry Chassagne, Marcin Zielinski

Abstract: In this study, a SiC on insulator growth is optimized, in order to electrically isolate the active structural layer towards the substrate....

Authors: Florentina Niebelschütz, Thomas Stauden, Katja Tonisch, Jörg Pezoldt

Abstract: In order to realize complex three dimensional or free standing structures on SiC substrates, an undercut, i.e. a selective isotropic etching...

Authors: Wolfgang J. Choyke, B. D'Urso, Fei Yan, Robert P. Devaty

Abstract: Ultra-precision machining is dominated by single-crystal diamond cutting tools, and is typically applied to a narrow range of materials,...

Authors: Yasuhisa Sano, Takehiro Kato, Tsutomu Hori, Kazuya Yamamura, Hidekazu Mimura, Yoshiaki Katsuyama, Kazuto Yamauchi

Abstract: In order to reduce the on-resistance in vertical power transistors, backside thinning is required after device processing. However, it is...

Authors: Florentina Niebelschütz, Wei Hong Zhao, Klemens Brueckner, Katja Tonisch, Matthias Linß, Matthias A. Hein, Jörg Pezoldt

Abstract: The manipulation of nucleation and growth conditions with Ge deposition prior to the carbonization and epitaxial growth changes the residual...

Authors: Ruggero Anzalone, Massimo Camarda, Daniel Alquier, M. Italia, Andrea Severino, Nicolò Piluso, Antonino La Magna, Gaetano Foti, Christopher Locke, Stephen E. Saddow, Alberto Roncaglia, Fulvio Mancarella, Antonella Poggi, Giuseppe D'Arrigo, Francesco La Via

Abstract: The fabrication of SiC MEMS-based sensors requires new processes able to realize microstructures on either bulk material or on the SiC...

Authors: Tatsunori Sugimoto, Toshiya Noro, Satarou Yamaguchi, Hideyoshi Majima, Tomohisa Kato

Abstract: We report on the discharge gas of the electric discharge machining (EDM) for silicon carbide (SiC) single crystal. We investigated the...


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