Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/www.scientific.net/MSF.645-648

Paper Title Page

Authors: Gwiy Sang Chung, Kyu Hyung Yoon

Abstract: This paper describes the characteristics of polycrystalline 3C-SiC micro resonators with 3 ×1017 - 1×1019 cm-3 in-situ N-doping...

873
Authors: Christian Brylinski, Olivier Ménard, Nicolas Thierry-Jebali, Frédéric Cayrel, Daniel Alquier

Abstract: The main rectifier device structures for power electronics based on SiC and on GaN are compared and the main issues for each structure are...

879
Authors: Roland Rupp, Fanny Björk, Gerald Deboy, Matthias Holz, Michael Treu, Jochen Hilsenbeck, Ralf Otremba, Hannes Zeichen

Abstract: With the help of an improved die attach the Rth,jc of SiC Schottky diodes can be reduced by 40-50% at a given chip size. This enables a...

885
Authors: Peter M. Gammon, Amador Pérez-Tomás, Michael R. Jennings, G.J. Roberts, V.A. Shah, James A. Covington, Philip A. Mawby

Abstract: SiC schottky diodes take advantage of the material's superior reverse breakdown voltage when compared to Silicon (Si) [1]. However, when...

889
Authors: Akimasa Kinoshita, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai

Abstract: It is known that a Schottky barrier height (b) of metal/C-face 4H-SiC Schottky barrier diode (SBD) differ from b of metal/Si-face 4H-SiC...

893
Authors: Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, C. Mark Johnson

Abstract: 4H-SiC diodes with 0.60 mm2 nickel silicide Schottky contacts were fabricated on commercial epitaxial layers. At room temperature, the...

897
Authors: Dethard Peters, Wolfgang Bartsch, Bernd Thomas, R. Sommer

Abstract: The paper compares static and dynamic characteristics of 6.5 kV SiC PiN diodes fabricated with different p-emitters. The version with the...

901
Authors: Gil Chung, Mark J. Loboda, Siddarth G. Sundaresan, Ranbir Singh

Abstract: Correlation between carrier lifetime and forward voltage drop in 4H-SiC PiN diodes has been investigated. PiN diodes from the drift layer of...

905
Authors: Wolfgang Bartsch, Reinhold Schörner, Karl Otto Dohnke

Abstract: In this work we discuss measurements of the breakdown voltage of diodes with non-punch-through (NPT)- and punch-through (PT)-designs. From...

909
Authors: Takashi Tsuji, T. Tawara, Ryohei Tanuma, Yoshiyuki Yonezawa, Noriyuki Iwamuro, K. Kosaka, H. Yurimoto, S. Kobayashi, Hirofumi Matsuhata, Kenji Fukuda, Hajime Okumura, Kazuo Arai

Abstract: The authors fabricated pn diodes with Al+ implantation in p-type epitaxial layers, and investigated the influence of the implantation dose...

913

Showing 211 to 220 of 300 Paper Titles