Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: Olivier Berry, Youness Hamieh, Stéphane Raël, Farid Meibody-Tabar, Sébastien Vieillard, Dominique Bergogne, Hervé Morel

Abstract: This paper presents a study on a SiC JFET leg of a 3-leg Voltage Source Inverter (VSI). The switching curves obtained with the JFET working...

Authors: Jang Kwon Lim, Mietek Bakowski, Hans Peter Nee

Abstract: The 1.2 kV 4H-SiC buried-grid vertical JFET structures with Normally-on (N-on) and Normally-off (N-off) design were investigated by...

Authors: Georg Tolstoy, Dimosthenis Peftitsis, Jang Kwon Lim, Mietek Bakowski, Hans Peter Nee

Abstract: The main problem when the conventional PSpice JFET model is used to simulate a vertical short-channel buried-grid JFET is caused by the...

Authors: Sei Hyung Ryu, Brett A. Hull, Sarit Dhar, L. Cheng, Qing Chun Jon Zhang, Jim Richmond, Mrinal K. Das, Anant K. Agarwal, John W. Palmour, Aivars J. Lelis, Bruce Geil, Charles Scozzie

Abstract: In this paper, we review the performance, reliability, and robustness of the current 4H-SiC power DMOSFETs. Due to advances in device and...

Authors: Siddharth Potbhare, Akin Akturk, Neil Goldsman, Aivars J. Lelis, Sarit Dhar, Anant K. Agarwal

Abstract: We present physics based models for the occupation of interface traps and the mobility of the transition layer found in 4H-SiC MOSFETs and...

Authors: Liang Chun Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, John S. Suehle, Kuang Sheng

Abstract: Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for...

Authors: Aivars J. Lelis, Ronald Green, Daniel B. Habersat, Neil Goldsman

Abstract: We have observed a noticeable increase in the instability of the I-V characteristics following an ON-state current stress, especially in the...

Authors: Hiroshi Kono, Takuma Suzuki, Makoto Mizukami, Chiharu Ota, Shinsuke Harada, Junji Senzaki, Kenji Fukuda, Takashi Shinohe

Abstract: Silicon carbide Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors (DIMOSFETs) were fabricated on 4H-SiC (000-1) carbon...

Authors: Takuji Hosoi, Yusuke Kagei, Takashi Kirino, Yuu Watanabe, Kohei Kozono, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Heiji Watanabe

Abstract: We investigated the impact of a combination treatment of nitrogen plasma exposure and forming gas annealing (FGA) for a thermally grown SiO2...

Authors: Mitsuo Okamoto, Miwako Iijima, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura

Abstract: We fabricated 4H-silicon carbide (SiC) Complementary Metal-Oxide-Semiconductor (CMOS) devices with wet gate oxidation processing. The...


Showing 231 to 240 of 300 Paper Titles