Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: Shinsuke Harada, Sachiko Ito, Makoto Kato, Akio Takatsuka, Kazutoshi Kojima, Kenji Fukuda, Hajime Okumura

Abstract: UMOSFET is theoretically suitable to decrease the on-resistance of the MOSFET. In this study, in order to determine the cell structure of...

Authors: Vinayak Tilak, Kevin Matocha, Greg Dunne

Abstract: nversion layers of 4H and 6H Silicon carbide based MOS devices are characterized by Gated Hall measurements to determine the trap density...

Authors: Takafumi Tanehira, T. Nakano, Motoi Nakao

Abstract: Metal oxide semiconductor field effect transistors (MOSFETs) using SiC on insulator (SiC-OI) substrate with the structure of 3C-SiC...

Authors: Kin Kiong Lee, Jamie Steward Laird, Takeshi Ohshima, Shinobu Onoda, Toshio Hirao, Hisayoshi Itoh

Abstract: This paper investigates the transient induced currents by energetic carbon ions in 6H-SiC MOSFETs and the carrier dynamic response due to...

Authors: Anant K. Agarwal, Qing Chun Jon Zhang, Robert Callanan, Craig Capell, Albert A. Burk, Michael J. O'Loughlin, John W. Palmour, Victor Temple, Robert E. Stahlbush, Joshua D. Caldwell, Heather O'Brian, Charles Scozzie

Abstract: In this paper, for the first time, we report a large area (1 cm2) SiC GTO with 9 kV blocking voltage fabricated on 100-mm 4H-SiC substrates...

Authors: Siddarth G. Sundaresan, H. Issa, Deepak Veeredy, Ranbir Singh

Abstract: This study is focused on the design and fabrication of large-area (4.1x4.1 mm2 and 8.2x8.2 mm2), 8.1 kV 4H-SiC GTO Thyristors. The anode and...

Authors: Qing Chun Jon Zhang, Robert Callanan, Anant K. Agarwal, Albert A. Burk, Michael J. O'Loughlin, John W. Palmour, Charles Scozzie

Abstract: 4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first...

Authors: Hiroki Miyake, Tsunenobu Kimoto, Jun Suda

Abstract: In this study, new SiC-based heterojunction bipolar transistors (HBT) are proposed. An n-type AlN/GaN short-period superlattice...

Authors: Martin Domeij, Carina Zaring, Andrei O. Konstantinov, Muhammad Nawaz, Jan Olov Svedberg, Krister Gumaelius, Imre Keri, Anders Lindgren, Bo Hammarlund, Mikael Östling, Mats Reimark

Abstract: This paper reports large active area (15 mm2) 4H-SiC BJTs with a low VCESAT=0.6 V at IC=20 A (JC=133 A/cm2) and an open-base breakdown...

Authors: Luca Farese, Bengt Gunnar Malm, Martin Domeij, Mikael Östling

Abstract: SiC power bipolar junction transistors (BJTs), for high voltage applications, have been studied under elevated temperature and electrical...


Showing 241 to 250 of 300 Paper Titles