Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: Kevin Matocha, Peter A. Losee, Arun Gowda, Eladio Delgado, Greg Dunne, Richard Beaupre, Ljubisa Stevanovic

Abstract: We address the two critical challenges that currently limit the applicability of SiC MOSFETs in commercial power conversion systems:...

Authors: Katsumi Ishikawa, Kazutoshi Ogawa, Norihumi Kameshiro, Hidekatsu Onose, Masahiro Nagasu

Abstract: We developed a JBS diode with characteristics of a low forward voltage and a low leakage current at 3kV. Further, we built a prototype of a...

Authors: Viorel Banu, Pierre Brosselard, Xavier Jordá, Phillippe Godignon, José Millan

Abstract: This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible with SiC. This paper reports...

Authors: Philip G. Neudeck, Michael J. Krasowski, Liang Yu Chen, Norman F. Prokop

Abstract: The NASA Glenn Research Center has previously reported prolonged stable operation of simple prototype 6H-SiC JFET integrated circuits (logic...

Authors: Satoshi Tanimoto, Naoki Nishio, Tatsuhiro Suzuki, Yoshinori Murakami, Hiromichi Ohashi, Hiroshi Yamaguchi, Hajime Okumura

Abstract: It is strongly desired to operate SiC power devices at higher junction temperatures (Tj), but that often entails problems because they...

Authors: Martin Le-Huu, Frederik F. Schrey, Michael Grieb, H. Schmitt, Volker Haeublein, Anton J. Bauer, Heiner Ryssel, L. Frey

Abstract: Normally-off 4H-SiC MOSFETs are used to build NMOS logic gates intended for high temperature operation. The logic gates are characterized...

Authors: Victor Veliadis, Damian Urciuoli, Harold Hearne, H.C. Ha, R. Howell, Charles Scozzie

Abstract: Bi-directional solid-state-circuit-breakers (SSCBs) are highly desirable in power-electronic fault-protection applications due to their high...

Authors: In Ho Kang, Sung Jae Joo, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim

Abstract: The 50W Quasi-resonant mode SMPS which adopted a normally-on-type SiC JFET as a switch has been designed and characterized. A simple...

Authors: Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson

Abstract: Looking back to the development of inverters using SiC switches, it appears that SiC devices do not behave like their silicon counterparts....

Authors: Arnaud Devie, Dominique Tournier, Phillippe Godignon, Miquel Vellvehi, Josep Montserrat, Xavier Jordá

Abstract: Lateral normally-on dual gates MESFETs withstanding a drain/source voltage in excess of 200V have been fabricated on semi-insulating 4H-SiC...


Showing 271 to 280 of 300 Paper Titles