Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/www.scientific.net/MSF.645-648

Paper Title Page

Authors: Dorothea Werber, Martin Aigner, Gerhard Wachutka

Abstract: Two different optical measurement techniques have been combined in one single experimental platform to provide detailed insight into the...

1041
Authors: Qing Chun Jon Zhang, Jim Richmond, Craig Capell, Anant K. Agarwal, John W. Palmour, Heather O'Brian, Charles Scozzie

Abstract: A novel power device configuration, the Bipolar Turn Off thyristor (BTO), was proposed and demonstrated in SiC. The BTO operates in anode...

1045
Authors: Pavel A. Ivanov, Michael E. Levinshtein, John W. Palmour, Anant K. Agarwal, Q. Jon Zhang

Abstract: In this paper, very fast switch-off of high voltage 4H–SiC npn Bipolar Junction Transistors (BJTs) driven in deep saturation regime is...

1049
Authors: Ahmed Elasser, Peter A. Losee, Steve Arthur, Zachary Stum, Kevin Matocha, Greg Dunne, Jerome L. Garrett, Michael Schutten, Dale Brown

Abstract: Due to the Silicon Carbide (SiC) material’s high electric field strength, wide bandgap, and good thermal conductivity, 4H-SiC thyristors are...

1053
Authors: Andrei O. Konstantinov, Martin Domeij, Carina Zaring, Imre Keri, Jan Olov Svedberg, Krister Gumaelius, Mikael Östling, Mats Reimark

Abstract: The mechanisms of bipolar degradation in silicon carbide BJTs are investigated and identified. Bipolar degradation occurs as result of...

1057
Authors: Benedetto Buono, Reza Ghandi, Martin Domeij, Bengt Gunnar Malm, Carl Mikael Zetterling, Mikael Östling

Abstract: The current gain of 4H-SiC BJTs has been modeled using interface traps between SiC and SiO2 to describe surface recombination, by a positive...

1061
Authors: Taku Tajima, Tohru Nakamura, Y. Watabe, Masataka Satoh, Tadashi Nakamura

Abstract: In this paper, we demonstrate triple ion implanted 4H-SiC bipolar junction transistor (BJT) with etched extrinsic base regions. At the...

1065
Authors: Alexey V. Vert, Stanislav I. Soloviev, Peter M. Sandvik

Abstract: We present recent results on 4H-SiC avalanche photodiode arrays and SiC-based solid-state photomultiplier arrays suitable for ultraviolet...

1069
Authors: Yasuo Hirabayashi, Satoru Kaneko, Kensuke Akiyama, Manabu Yasui, Keitaro Sakurazawa

Abstract: For the purpose of the improving the efficiency of the 4H-SiC photodiode, we reported the spectral reflectance of the antireflection...

1073
Authors: Alexander M. Ivanov, Marina G. Mynbaeva, Anton V. Sadokhin, Nikita B. Strokan, Alexander A. Lebedev

Abstract: Nonequilibrium-charge transport has been studied in a structure with a Schottky barrier fabricated on a CVD-grown n-4H-SiC film. The charge...

1077

Showing 251 to 260 of 300 Paper Titles