Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: Bertrand Vergne, Sigo Scharnholz, Jens Peter Konrath, Vincent Couderc, Philippe Lévêque, Emil Spahn

Abstract: We present photoconductivity experiments on a 4H-SiC diode and on 4H-SiC high purity semi-insulating (HPSI) substrate. These devices have...

Authors: Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, Kazutoshi Kojima, Atsushi Koizumi, Kazuo Uchida, Shinji Nozaki

Abstract: The effect of electron irradiation on the charge collection efficiency of a 6H-SiC p+n diode has been studied. The diodes were irradiated...

Authors: Bharat Krishnan, Joseph Neil Merrett, Galyna Melnychuk, Yaroslav Koshka

Abstract: In this work, the benefits of the low-temperature halo-carbon epitaxial growth at 1300oC to form anodes of 4H-SiC PiN diodes were...

Authors: Victor Veliadis, Harold Hearne, Eric J. Stewart, R. Howell, Aivars J. Lelis, Charles Scozzie

Abstract: A recessed implanted-gate short-channel 1290-V normally-OFF 4H-SiC vertical-channel JFET (VJFET), fabricated in seven...

Authors: Rudolf Elpelt, Peter Friedrichs, Jürgen Biela

Abstract: Since SiC VJFETs are believed to offer extremely fast turn on and turn off processes it is important to understand how these transients are...

Authors: Andrew Ritenour, David C. Sheridan, Volodymyr Bondarenko, Jeff B. Casady

Abstract: Recently 63 m, 100 m, and 125 m 1200 V normally-off SiC VJFETs have become commercially available and 99% efficiency has been...

Authors: Yasunori Tanaka, Shinobu Onoda, Akio Takatsuka, Takeshi Ohshima, Tsutomu Yatsuo

Abstract: In this study, we evaluated the radiation hardness of SiC Buried Gate Static Induction Transistors (SiC-BGSITs) and Si-based switching...

Authors: John Adjaye, Michael S. Mazzola

Abstract: The two-dimensional device simulator, MediciTM, was used to simulate 4H silicon carbide (4H-SiC) n-channel power metal semiconductor field...

Authors: Jie Yang, John Fraley, Bryon Western, Marcelo Schupbach, Alexander B. Lostetter

Abstract: In order to facilitate the circuit design and simulation at extreme temperatures, APEI, Inc. fully characterized a custom-built SiC VJFET...

Authors: Daniel Brennan, Bing Miao, Konstantin Vassilevski, Nicolas G. Wright, Alton B. Horsfall

Abstract: This work presents the amplitude modulation radio transmission system for communications in hostile environments. The commissioning of a...


Showing 221 to 230 of 300 Paper Titles