Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: James E. Green, W.S. Loh, J.P.R. David, R.C. Tozer, Stanislav I. Soloviev, Peter M. Sandvik

Abstract: We report photomultiplication, M, and excess noise, F, measurements at 244nm and 325nm in two 4H-SiC separate absorption and multiplication...

Authors: Gwiy Sang Chung, Jae Min Jeong

Abstract: This paper describes fabrication and properties of polycrystalline 3C-SiC micro heaters built on AlN(0.1 μm)/3C-SiC(1.0 μm) suspended...

Authors: Mietek Bakowski, Adolf Schöner, Ingemar Petermann, Susan Savage

Abstract: This paper describes a novel design to achieve sensitive and stable performance of an avalanche photodiode based on silicon carbide...

Authors: Simon Barker, Bing Miao, Daniel Brennan, Konstantin Vassilevski, Nicolas G. Wright, Alton B. Horsfall

Abstract: This paper demonstrates the rst high temperature silicon carbide based energy harvesting module suitable for use in hostile environments....

Authors: Phillippe Godignon, Iñigo Martin, Gemma Gabriel, Rodrigo Gomez, Marcel Placidi, Rosa Villa

Abstract: Silicon Carbide is mainly used for power semiconductor devices fabrication. However, SiC material also offers attractive properties for...

Authors: Jürgen Biela, Mario Schweizer, Stefan Waffler, Benjamin Wrzecionko, Johann Walter Kolar

Abstract: Switching devices based on wide band gap materials as SiC o er a signi cant perfor- mance improvement on the switch level compared to Si...

Authors: Amita Patil, Xiao An Fu, Mehran Mehregany, Steven Garverick

Abstract: Fully monolithic, transimpedance and differential voltage amplifiers are reported in this paper based on 6H-SiC, n-channel, depletion-mode...

Authors: Samuel V. Araújo, Benjamin Sahan, Peter Zacharias, Roland Rupp, Xi Zhang

Abstract: Photovoltaic systems have been considered as one of most promising fields of application for SiC semiconductors mainly due to the...

Authors: Xiao An Fu, Amita Patil, Te Hao Lee, Steven Garverick, Mehran Mehregany

Abstract: We report fabrication of lateral, n-channel, depletion-mode, junction-field-effect-transistor (JFET) monolithic analog integrated circuits...

Authors: James D. Scofield, Joseph Neil Merrett, Jim Richmond, Anant K. Agarwal, Scott Leslie

Abstract: In this paper we report the electrical and thermal performance characteristics of 1200 V, 100 A, 200°C (Tj), SiC MOSFET power modules...


Showing 261 to 270 of 300 Paper Titles