Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/www.scientific.net/MSF.645-648

Paper Title Page

Authors: Siddharth Potbhare, Neil Goldsman, Akin Akturk, Aivars J. Lelis

Abstract: We present detailed mixed-mode simulations of a DC-DC converter based on 4H-SiC DMOSFETs. The mixed-mode modeling enables the use of complex...

1163
Authors: Jochen Hilsenbeck, Zhang Xi, Daniel Domes, Kathrin Rüschenschmidt, Michael Treu, Roland Rupp

Abstract: Starting with the production of Infineon´s first silicon carbide (SiC) Schottky diodes in 2001, a lot of progress was achieved during recent...

1167
Authors: Dirk Kranzer, Florian Reiners, Christian Wilhelm, Bruno Burger

Abstract: In this paper the system improvements of PV-inverters with SiC-transistors are demonstrated. The basic characteristics of engineering...

1171
Authors: Immo Koch, Wolf Rüdiger Canders

Abstract: The optimal control parameters for semiconductor switches at the development state with new materials and structures are often unidentified....

1177
Authors: Yuri N. Makarov, T.Yu. Chemekova, O.V. Avdeev, N. Mokhov, S.S. Nagalyuk, M.G. Ramm, Heikki Helava

Abstract: AlN substrates are produced by Physical Vapor Transport (PVT) growth of AlN bulk single crystals followed by post growth processing of the...

1183
Authors: Gholam Reza Yazdi, Konstantin Vassilevski, José M. Córdoba, Daniela Gogova, Irina P. Nikitina, Mikael Syväjärvi, Magnus Odén, Nicolas G. Wright, Rositza Yakimova

Abstract: Free standing AlN wafers were grown on pre-patterned and in situ patterned 4H-SiC substrates by a physical vapor transport method. It is...

1187
Authors: Ghassan Younes, Gabriel Ferro, Maher Soueidan, Arnaud Brioude, François Cauwet

Abstract: h-BN layers were deposited on α-SiC substrates by CVD at high temperature (1500-1900°C) using B2H6 and NH3 diluted in Ar. Growth rates were...

1191
Authors: Ivan V. Ilyin, Alexandra A. Soltamova, V.A. Soltamov, V.A. Khramtsov, E.N. Mokhov, P.G. Baranov

Abstract: Electron paramagnetic resonance (EPR) at X-band (9.4 GHz) and Q-band (35 GHz) have been used to study defects in two samples of AlN...

1195
Authors: G. Gálvez de la Puente, Oliver Erlenbach, Jorge Andres Guerra, T. Hupfer, M. Steidl, Francisco De Zela, Roland Weingärtner, Albrecht Winnacker

Abstract: Amorphous pseudobinary (SiC)1 x(AlN)x thin films have been produced by radio frequency dual magnetron sputtering from bulk SiC and AlN...

1199
Authors: Sergey Y. Davydov, Alexander A. Lebedev

Abstract: Within the scope of the Harrison’s bond orbital model the spontaneous polarization, high- and low frequency dielectric constants are...

1203

Showing 281 to 290 of 300 Paper Titles