Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/www.scientific.net/MSF.645-648

Paper Title Page

Authors: Mulpuri V. Rao, Y.L. Tian, Syed B. Qadri, Jaime A. Freitas, Roberta Nipoti

Abstract: In this work, the surface, lattice and electrical properties of implanted 4H-SiC, GaN and ZnO, annealed by a novel ultra-fast microwave...

709
Authors: Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Corrado Bongiorno, Mario Saggio, Vito Raineri

Abstract: This paper reports on the electrical activation and structural analysis of Al implanted 4H-SiC. The evolution of the implant damage during...

713
Authors: Laurent Ottaviani, Stéphane Biondo, Stéphane Morata, Olivier Palais, Thierry Sauvage, Frank Torregrosa

Abstract: We report on topographical, structural and electrical measurements of aluminum-implanted and annealed 4H-SiC epitaxial samples. The...

717
Authors: Jean François Barbot, Marie France Beaufort, Valerie Audurier

Abstract: The evolution of mechanical properties of helium-implanted 4H-SiC at room temperature has been mainly studied by nanoindentation tests. The...

721
Authors: Shigeru Hirono, Hironori Torii, Tetsuya Tajima, Takao Amazawa, Shigeru Umemura, Tomoyuki Kamata, Yasuo Hirabayashi

Abstract: A high dose impurity doping process for 4H-SiC crystals has been developed using electron cyclotron resonance (ECR) sputtered carbon cap...

725
Authors: Bang Hung Tsao, Jacob W. Lawson, James D. Scofield, Javier Francisco Baca

Abstract: Improved AlNi-based ohmic contacts to p-type 4H-SiC have been achieved using low energy ion (Al+)implantation, the addition of a thin Ti...

729
Authors: Marko J. Tadjer, Travis J. Anderson, Karl D. Hobart, Tatyana I. Feygelson, James E. Butler, Fritz J. Kub

Abstract: Nanocrystalline diamond (NCD) films were deposited using plasma-enhanced chemical vapor deposition. The NCD films were Boron-doped for...

733
Authors: Andrian V. Kuchuk, M. Guziewicz, Renata Ratajczak, Marek Wzorek, V.P. Kladko, Anna Piotrowska

Abstract: The reliability of Ni2Si/n-SiC ohmic contacts with Au overlayer either without or with Ta-Si-N diffusion barrier was investigated after...

737
Authors: Nicolas Heuck, G. Palm, T. Sauerberg, A. Stranz, A. Waag, Andrey Bakin

Abstract: In this paper a die-attachment technology for high temperature applications based on the Low Temperature Joining Technique (LTJT) is...

741
Authors: M. Guziewicz, Ryszard Kisiel, Krystyna Gołaszewska, Marek Wzorek, Anna Stonert, Anna Piotrowska, Jan Szmidt

Abstract: The stability of Au wire connections to n-SiC/Ti ohmic contacts and to n-SiC/Ni ohmic contacts with top Au or Pt layers has been...

745

Showing 171 to 180 of 300 Paper Titles