Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/www.scientific.net/MSF.645-648

Paper Title Page

Authors: Jonathan P. Goss, Patrick R. Briddon, Nicolas G. Wright, Alton B. Horsfall

Abstract: The nature of the interaction between the substrate and the graphene is critical in terms of impact upon the graphene electron dispersion...

619
Authors: Christian Riedl, Camilla Coletti, Takayuki Iwasaki, Ulrich Starke

Abstract: In this report we review how intrinsic drawbacks of epitaxial graphene on SiC(0001) such as n-doping and strong electronic influence of the...

623
Authors: Florian Speck, Markus Ostler, Jonas Röhrl, Johannes Jobst, Daniel Waldmann, Martin Hundhausen, Lothar Ley, Heiko B. Weber, Thomas Seyller

Abstract: We report on a comprehensive study of the properties of quasi-freestanding monolayer and bilayer graphene produced by conversion of the...

629
Authors: Joshua D. Caldwell, Travis J. Anderson, Karl D. Hobart, James C. Culbertson, Glenn G. Jernigan, Fritz J. Kub, Joseph L. Tedesco, Jennifer K. Hite, Michael A. Mastro, Rachael L. Myers-Ward, Charles R. Eddy, Paul M. Campbell, D. Kurt Gaskill

Abstract: Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit high carrier mobilities, in comparison to other growth...

633
Authors: Johannes Jobst, Daniel Waldmann, Konstantin V. Emtsev, Thomas Seyller, Heiko B. Weber

Abstract: We report on electrical measurements on epitaxial graphene on 6H-SiC (0001). The graphene layers were fabricated by thermal decomposition...

637
Authors: Tsunenobu Kimoto, Gan Feng, Toru Hiyoshi, Koutarou Kawahara, Masato Noborio, Jun Suda

Abstract: Extended defects and deep levels generated during epitaxial growth of 4H-SiC and device processing have been reviewed. Three types in-grown...

645
Authors: Koutarou Kawahara, Giovanni Alfieri, Toru Hiyoshi, Gerhard Pensl, Tsunenobu Kimoto

Abstract: The authors have investigated effects of thermal oxidation on deep levels in the whole energy range of bandgap of 4H-SiC which are generated...

651
Authors: Kenji Fukuda, Akimasa Kinoshita, Takasumi Ohyanagi, Ryouji Kosugi, T. Sakata, Y. Sakuma, Junji Senzaki, A. Minami, Atsushi Shimozato, Takuma Suzuki, Tetsuo Hatakeyama, Takashi Shinohe, Hirofumi Matsuhata, Hiroshi Yamaguchi, Ichiro Nagai, Shinsuke Harada, Kyoichi Ichinoseki, Tsutomu Yatsuo, Hajime Okumura, Kazuo Arai

Abstract: The influences of processing and material defects on the electrical characteristics of large-capacity (approximately 100A) SiC-SBDs and...

655
Authors: Reza Ghandi, Martin Domeij, Romain Esteve, Benedetto Buono, Adolf Schöner, Ji Sheng Han, Sima Dimitrijev, Sergey A. Reshanov, Carl Mikael Zetterling, Mikael Östling

Abstract: In this work, the electrical performance in terms of maximum current gain, ON-resistance and blocking capability has been compared for...

661
Authors: Sandra Heim, Andreas Albrecht, Wolfgang Bartsch

Abstract: In this work we discuss a structure of a p-doped Poly-Si layer and a Ni layer deposited onto n-type 4H-SiC in order to form a Schottky-like...

665

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