Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: Masashi Kato, H. Ono, Masaya Ichimura

Abstract: We performed electrochemical deposition of ZnO on the surfaces of 4H-SiC epilayers and characterized Ni Schottky diodes fabricated on the...

Authors: Jochen Hilsenbeck, Michael Treu, Roland Rupp, Kathrin Rüschenschmidt, Ronny Kern, Matthias Holz

Abstract: In this paper we describe how a merged pn Schottky diode (MPS diode) is capable to drive surge current levels far beyond the normal current...

Authors: Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Stefano Leone, Vito Raineri

Abstract: The electrical characteristics of Au/3C-SiC Schottky diodes were studied and related to crystal defects. A structural analysis performed by...

Authors: Michael Grieb, Masato Noborio, Dethard Peters, Anton J. Bauer, Peter Friedrichs, Tsunenobu Kimoto, Heiner Ryssel

Abstract: The electrical characteristics and the reliability of different oxides on the 4H-SiC Si-face for gate oxide application in MOS devices are...

Authors: Junji Senzaki, Takuma Suzuki, Atsushi Shimozato, Kenji Fukuda, Kazuo Arai, Hajime Okumura

Abstract: The effect of ammonia (NH3) post-oxidation annealing (POA) technique on the reliability of thermal oxides grown on a n-type 4H-SiC (0001)...

Authors: Fernanda Chiarello Stedile, Silma Alberton Corrêa, Cláudio Radtke, Leonardo Miotti, Israel J.R. Baumvol, Gabriel V. Soares, Fred Kong, Ji Sheng Han, Leonie Hold, Sima Dimitrijev

Abstract: The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was...

Authors: John Rozen, Xing Guang Zhu, Ayayi Claude Ahyi, John R. Williams, Leonard C. Feldman

Abstract: We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with...

Authors: Thanos Tsirimpis, Michael Krieger, Heiko B. Weber, Gerhard Pensl

Abstract: Boron (B) ions were implanted into 4H-SiC. In order to avoid the out-diffusion of B ions during the subsequent annealing process, two...

Authors: Margareta K. Linnarsson, Aurégane Audren, Anders Hallén

Abstract: Manganese diffusion in 4H-SiC for possible spintronic applications is investigated. Ion implantation is used to introduce manganese in...

Authors: Tomokatsu Watanabe, Sunao Aya, Ryo Hattori, Masayuki Imaizumi, Tatsuo Oomori

Abstract: Effects of implantation temperature on electrical properties of heavily-Al-doped 4H-SiC layer formed with Al implantation have been...


Showing 161 to 170 of 300 Paper Titles