Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: Akio Takatsuka, Yasunori Tanaka, Koji Yano, Tsutomu Yatsuo, Kazuo Arai

Abstract: We investigated the crystalline quality and electrical properties of the channel regions in 4H-SiC buried gate static induction transistors...

Authors: Massimo Camarda, Antonino La Magna, Andrea Canino, Francesco La Via

Abstract: In this article, using Kinetic Monte simulations on super-lattices, we study the evolution of extended defects during epitaxial growth....

Authors: Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Kazuo Arai, Sadafumi Yoshida

Abstract: In this study, we investigated the cluster effect on the occurrence of giant step bunching. We generated carbon clusters on 4H-SiC (0001)...

Authors: Dmitry Kazantsev

Abstract: To observe the direction of the surface polariton wave excited by the external radiation on the semi-infinite crystal surface, the opaque...

Authors: Makoto Yamaguchi, M. Fujitsuka, S. Ueno, I. Miura, W. Erikawa, Takuro Tomita

Abstract: Raman spectroscopic study is carried on the Vickers indented area on the surface of a single crystal silicon carbide (4H- and 6H-SiC) as a...

Authors: Andrea Canino, Massimo Camarda, Francesco La Via

Abstract: Single Shockley faults have been studied in 4H-SiC epitaxial layers by using a spatial resolved micro-photoluminescence technique. In...

Authors: Kun Yong Lee, Hisashi Miyazaki, Yoichi Okamoto, Jun Morimoto

Abstract: We have detected defects micro-pipes and a cluster of impurities in semi-insulating 6H-SiC substrates using long-wavelength infrared thermal...

Authors: Rositza Yakimova, Chariya Virojanadara, Daniela Gogova, Mikael Syväjärvi, D. Siche, Karin Larsson, Leif I. Johansson

Abstract: We are aiming at understanding the graphene formation mechanism on different SiC polytypes (6H, 4H and 3C) and orientations with the...

Authors: Wlodek Strupiński, Aneta Drabińska, Rafał Bożek, Jolanta Borysiuk, Andrzej Wysmolek, Roman Stepniewski, Kinga Kościewicz, Piotr Caban, K. Korona, K. Grodecki, Pierre Antoine Geslin, Jacek M. Baranowski

Abstract: The paper provides a deeper understanding of key-parameters of epitaxial graphene growth techniques on SiC. At 16000C, the graphene layer is...

Authors: John Boeckl, W.C. Mitchel, Edwina Clarke, Roland L. Barbosa, Wei Jie Lu

Abstract: Graphene growth on SiC in atmospheric pressure argon exhibits large terrace sizes and coverage over the entire substrate surface. Graphene...


Showing 131 to 140 of 300 Paper Titles