Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: Vladimir Ilich Sankin, Nikita S. Averkiev, Andrey M. Monakhov, Pavel P. Shkrebiy, Alla A. Lepneva, Andrey G. Ostroumov, Pavel L. Abramov, Elena V. Bogdanova, Sergey P. Lebedev, Anatoliy M. Strelchuk

Abstract: In this work, we have studied I-V characteristics of Al breakdown in 6H-, 4H- and 15R-SiC in electrical field. As a result there obtained...

Authors: Giovanni Alfieri, Tsunenobu Kimoto, Gerhard Pensl

Abstract: We report on the electrical characterization of high-purity semi-insulating 4H-SiC after annealing at temperatures between room temperature...

Authors: Oliver Erlenbach, Gonzalo Gálvez, Jorge Andres Guerra, Francisco De Zela, Roland Weingärtner, Albrecht Winnacker

Abstract: We produce amorphous terbium doped wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1 x(AlN)x by rf triple magnetron...

Authors: Michael Krieger, Svetlana Beljakowa, Bernd Zippelius, Valeri V. Afanas'ev, Anton J. Bauer, Yuichiro Nanen, Tsunenobu Kimoto, Gerhard Pensl

Abstract: Two electrical measurement techniques are frequently employed for the characteri- zation of traps at the SiO2/SiC interface: the thermal...

Authors: Marko J. Tadjer, Karl D. Hobart, Robert E. Stahlbush, Patrick J. McMarr, Hap L. Hughes, Fritz J. Kub, Sarah K. Haney

Abstract: Thermally stimulated current (TSC) measurements on epitaxial and implanted 4H-SiC MOS capacitors are presented. The effect of gamma ray...

Authors: T. Paul Chow

Abstract: We have comparatively characterized the electrical characteristics of 4H-SiC and 2H-GaN MOS capacitors and FETs. While progressive...

Authors: Aveek Chatterjee, Kevin Matocha, Vinayak Tilak, Jody Fronheiser, Hong Piao

Abstract: We explain the role of nitrogen in simultaneously increasing the inversion channel mobility and reducing the threshold voltage of SiC...

Authors: Toshiharu Ohnuma, Atsumi Miyashita, Masahito Yoshikawa, Hidekazu Tsuchida

Abstract: We perform dynamical simulations of dry oxidation and NO annealing of the SiO2/4H-SiC C-face interface at 1500K using first-principles...

Authors: Yuichiro Nanen, Bernd Zippelius, Svetlana Beljakowa, Lia Trapaidze, Michael Krieger, Tsunenobu Kimoto, Gerhard Pensl

Abstract: The authors investigated the effect of preannealing on N-/Al-coimplanted and over-oxidized Metal-Oxide-Semiconductor Field Effect...

Authors: Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Roberta Nipoti, Aldo Armigliato, Luca Belsito

Abstract: In this paper the electrical and structural characteristics of n-MOSFETs fabricated on 4H SiC with a process based on nitrogen (N)...


Showing 111 to 120 of 300 Paper Titles