Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: Andrea Severino, Ruggero Anzalone, Corrado Bongiorno, Francesco La Via

Abstract: A wide characterization of crystalline defects involved in the 3C-SiC heteroepitaxy on Si is here presented. The aim of this work is to show...

Authors: Valdas Jokubavicius, Justinas Palisaitis, Remigijus Vasiliauskas, Rositza Yakimova, Mikael Syväjärvi

Abstract: Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of...

Authors: Bralee Chayasombat, Y. Kimata, T. Kato, Tomoharu Tokunaga, Katsuhiro Sasaki, Kotaro Kuroda

Abstract: Microstructures of switch-back epitaxy cubic silicon carbide (3C-SiC) before and after Al ion implantation were investigated by transmission...

Authors: Maya Marinova, Georgios Zoulis, Teddy Robert, Frédéric Mercier, Alkyoni Mantzari, Irina G. Galben-Sandulache, Olivier Kim-Hak, Jean Lorenzzi, Sandrine Juillaguet, Didier Chaussende, Gabriel Ferro, Jean Camassel, Efstathios K. Polychroniadis

Abstract: In the present work the defects appearing in layers grown by liquid phase epitaxy on different substrates are compared. The used seeds were...

Authors: Francesca Rossi, Filippo Fabbri, Giovanni Attolini, Matteo Bosi, Bernard Enrico Watts, Giancarlo Salviati

Abstract: -SiC and -SiC/SiO2 core-shell nanowires (NWs) grown on silicon substrates by three different processes, based on the use of i) carbon...

Authors: Kang San Kim, Gwiy Sang Chung

Abstract: This paper describes the characteristics of porous 3C-SiC with in-situ N-doping concentrations. Polycrystalline (poly) 3C-SiC thin films...

Authors: Adam Gali, Andreas Gällström, Nguyen Tien Son, Erik Janzén

Abstract: We investigate the neutral divacancy in SiC by means of first principles calculations and group theory analysis. We identify the nature of...

Authors: Nguyen Tien Son, Patrick Carlsson, Junichi Isoya, Norio Morishita, Takeshi Ohshima, Björn Magnusson, Erik Janzén

Abstract: Electron paramagnetic resonance (EPR) was used to study high-purity semi-insulating 4H-SiC irradiated with 2 MeV electrons at room...

Authors: Andreas Scholle, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, Uwe Gerstmann

Abstract: In non-annealed 6H-SiC samples that were electron irradiated at room temperature, a new EPR signal due to a S=1 defect center with...

Authors: John W. Steeds

Abstract: Low voltage electron irradiations with electron energies down to the C-displacement threshold have been performed and the irradiated samples...


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