Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: Michael Dudley, Ning Zhang, Yu Zhang, Balaji Raghothamachar, Sha Yan Byrapa, Gloria Choi, Edward K. Sanchez, Darren M. Hansen, Roman Drachev, Mark J. Loboda

Abstract: Synchrotron White Beam X-ray Topography (SWBXT) studies are presented of basal plane dislocation (BPD) configurations and behavior in a new...

Authors: Michael Dudley, Ning Zhang, Yu Zhang, Balaji Raghothamachar, Edward K. Sanchez

Abstract: Observations of dislocation nucleation occurring at substrate surface scratches during 4H-SiC CVD homoepitaxial growth are reported....

Authors: Birgit Kallinger, Bernd Thomas, Sebastian Polster, Patrick Berwian, Jochen Friedrich

Abstract: Basal Plane Dislocations (BPDs) in SiC are thought to cause degradation of bipolar diodes with blocking voltages > 2kV by triggering the...

Authors: Isaho Kamata, Masahiro Nagano, Hidekazu Tsuchida

Abstract: Burgers vector directions of threading edge dislocations (TEDs) in 4H-SiC epitaxial layer are distinguished by grazing incidence high...

Authors: Jawad ul Hassan, Anne Henry, Peder Bergman

Abstract: Two different and novel in-grown triangular stacking faults have been observed and characterized in 4H-SiC epitaxial layers grown on 4o...

Authors: Masakazu Katsuno, Noboru Ohtani, Masashi Nakabayashi, Tatsuo Fujimoto, Hirokatsu Yashiro, Hiroshi Tsuge, Takashi Aigo, Taizo Hoshino, Hosei Hirano, Wataru Ohashi

Abstract: Dislocations in highly nitrogen-doped (N > 1×1019 cm-3) low-resistivity ( < 10 mcm) 4H-SiC substrates were investigated by...

Authors: Nadeemullah A. Mahadik, Robert E. Stahlbush, Syed B. Qadri, Orest J. Glembocki, Dimitri A. Alexson, Rachael L. Myers-Ward, Joseph L. Tedesco, Charles R. Eddy, D. Kurt Gaskill

Abstract: The structure of various inclusions in SiC epitaxial layers grown on 4o offcut substrates was investigated using three advanced techniques....

Authors: Tatsuo Fujimoto, Takashi Aigo, Masashi Nakabayashi, S. Satoh, Masakazu Katsuno, Hiroshi Tsuge, Hirokatsu Yashiro, Hosei Hirano, Taizo Hoshino, Wataru Ohashi

Abstract: Time-dependent evolutions of single and quadruple Shockley stacking faults (sSSF and 4SSF) in 4° off 4H-SiC epitaxial layers have been...

Authors: Masahiro Nagano, Hidekazu Tsuchida, Takuma Suzuki, Tetsuo Hatakeyama, Junji Senzaki, Kenji Fukuda

Abstract: Condition dependences of defect formation in 4H-SiC epilayer induced by the implantation/annealing process were investigated using...

Authors: Jawad ul Hassan, Peder Bergman

Abstract: An extended structural defects which locally drastically reduces the carrier lifetime, has been observed in as-grown epilayers. A...


Showing 71 to 80 of 300 Paper Titles