Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: Yoshinori Matsushita, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima

Abstract: We measured the excess carrier lifetimes in as-grown and electron irradiated p-type 4H-SiC epitaxial layers with the microwave...

Authors: Serguei I. Maximenko, Jaime A. Freitas, Yoosuf N. Picard, Paul B. Klein, Rachael L. Myers-Ward, Kok Keong Lew, Peter G. Muzykov, D. Kurt Gaskill, Charles R. Eddy, Tangali S. Sudarshan

Abstract: The effect of various types of in-grown stacking faults and threading screw/edge type dislocations on carrier lifetime and diffusion lengths...

Authors: Kęstutis Jarašiūnas, Patrik Ščajev, Vytautas Gudelis, Paul B. Klein, Masashi Kato

Abstract: We applied time-resolved free carrier absorption (FCA) to monitor non-equilibrium carrier dynamics in 4H epilayers and 3C SiC bulk crystals...

Authors: Arunas Kadys, Patrik Ščajev, Georgios Manolis, Vytautas Gudelis, Kęstutis Jarašiūnas, Pavel L. Abramov, Sergey P. Lebedev, Alexander A. Lebedev

Abstract: Photoelectric properties of 3C sublimation-grown epitaxial layers with different structural quality were studied by using time-resolved...

Authors: Thomas L. Straubinger, Richard L. Woodin, T. Witt, J. Shovlin, Gary M. Dolny, P. Sasahara, Erwin Schmitt, Arnd Dietrich Weber, Jeff B. Casady, Janna R. B. Casady

Abstract: We report here an anisotropic increase in SiC bulk resistivity by annealing at 1150 °C, and discuss the implications for SiC devices. The...

Authors: Marco Naretto, Denis Perrone, Sergio Ferrero, Luciano Scaltrito

Abstract: In this work we present the results of electrical characterization of 4H-SiC power Schottky diodes with a Mo metal barrier for high power...

Authors: Vytautas Grivickas, K. Gulbinas, Paulius Grivickas, Georgios Manolis, Jan Linnros

Abstract: An alternative approach based on non-equilibrium free-carrier density measurements was used to characterize the fundamental absorption edge...

Authors: Takuro Tomita, M. Iwami, M. Yamamoto, M. Deki, Shigeki Matsuo, Shuichi Hashimoto, Y. Nakagawa, T. Kitada, T. Isu, S. Saito, K. Sakai, Shinobu Onoda, Takeshi Ohshima

Abstract: Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity....

Authors: Kazuhiro Mochizuki, Haruka Shimizu, Natsuki Yokoyama

Abstract: Boron diffusion in boron-doped poly-Si/nitrogen-doped 4H-SiC structure was investigated by combining a reported model of poly-Si diffusion...


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