Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: Kung Yen Lee, Shin Yi Lee, Chih Fang Huang

Abstract: This research is focused on the influence of high C/Si ratios and low pressure on n-type doping concentration and surface defects of 4H-SiC...

Authors: Nikoletta Jegenyes, Jean Lorenzzi, Veronique Soulière, Jacques Dazord, François Cauwet, Gabriel Ferro

Abstract: Starting from 3C-SiC(111) layers grown by Vapour-Liquid-Solid mechanism, homoepitaxial growth by Chemical Vapour Deposition was carried out...

Authors: James Huguenin-Love, Noel T. Lauer, Rodney J. Soukup, Ned J. Ianno, Štepan Kment, Zdenek Hubička

Abstract: Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and...

Authors: Giuseppe D'Arrigo, Andrea Severino, G. Milazzo, Corrado Bongiorno, Nicolò Piluso, Giuseppe Abbondanza, Marco Mauceri, Giuseppe Condorelli, Francesco La Via

Abstract: 3C-SiC devices are hampered by the defect density in heteroepitaxial films. Acting on the substrate, it is possible to achieve a better...

Authors: Giovanni Attolini, Matteo Bosi, Francesca Rossi, Bernard Enrico Watts, Giancarlo Salviati, Gábor Battistig, László Dobos, Béla Pécz

Abstract: 3C-SiC films were grown on Si by VPE using CBr4 as the carbon source, at temperatures ranging between 1100 to 1250°C. XRD, TEM, AFM, and SEM...

Authors: Ruggero Anzalone, Christopher Locke, J. Carballo, Nicolò Piluso, Andrea Severino, Giuseppe D'Arrigo, A.A. Volinsky, Francesco La Via, Stephen E. Saddow

Abstract: SiC is a candidate material for micro- and nano-electromechanical systems (MEMS and NEMS). In order to understand the impact that the growth...

Authors: Eiji Saito, Sergey Filimonov, Maki Suemitsu

Abstract: Temperature dependence of the growth rate of 3C-SiC(001) films on Si(001) substrates during ultralow-pressure (ULP: ~10-1 Pa) CVD using...

Authors: Philip Hens, Günter Wagner, Astrid Hölzing, Rainer Hock, Peter J. Wellmann

Abstract: Usually a waiting step at around 1000°C to 1100°C during the carbonization step for 3C-SiC on silicon is implemented for establishing a...

Authors: Marc Portail, Thierry Chassagne, Sebastien Roy, Catherine Moisson, Marcin Zielinski

Abstract: We investigate by means of Atomic Force Microscopy and Scanning Electron Microscopy the surface modifications of 3C-SiC(111)/Si epilayers...

Authors: Jörg Pezoldt, Thomas Stauden, Florentina Niebelschütz, Mohamad Adnan Alsioufy, Richard Nader, Pierre M. Masri

Abstract: Germanium modified silicon surfaces in combination with two step epitaxial growth technique consisting in conversion of the Si(100)...


Showing 31 to 40 of 300 Paper Titles