Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: Olivier Kim-Hak, Jean Lorenzzi, Nikoletta Jegenyes, Gabriel Ferro, Davy Carole, Patrick Chaudouët, Olivier Dezellus, Didier Chaussende, Jean Claude Viala, Christian Brylinski

Abstract: The influence of nitrogen impurity on the stabilization of 3C-SiC polytype has been studied during vapour-liquid-solid (VLS) growth on...

Authors: Andrea Severino, Massimo Camarda, Nicolò Piluso, M. Italia, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, Francesco La Via

Abstract: Growth of 3C-SiC films on an off-axis (111) Si substrate, with a miscut of 4° towards the <110> direction, is here reported. An extensive...

Authors: Jean Lorenzzi, Georgios Zoulis, Olivier Kim-Hak, Nikoletta Jegenyes, Davy Carole, François Cauwet, Sandrine Juillaguet, Gabriel Ferro, Jean Camassel

Abstract: We report the results of a systematic investigation performed to reduce the residual n-type doping level of the 3C-SiC layers grown by the...

Authors: Remigijus Vasiliauskas, Maya Marinova, Mikael Syväjärvi, Alkyoni Mantzari, Ariadne Andreadou, Jean Lorenzzi, Gabriel Ferro, Efstathios K. Polychroniadis, Rositza Yakimova

Abstract: Epitaxial growth of cubic silicon carbide on 6H-SiC substrates, and 6H-SiC substrates with (111) 3C-SiC buffer layer, deposited by vapour...

Authors: Georgios Zoulis, Jian Wu Sun, Milena Beshkova, Remigijus Vasiliauskas, Sandrine Juillaguet, Hervé Peyre, Mikael Syväjärvi, Rositza Yakimova, Jean Camassel

Abstract: Both, n-type and p-type 3C-SiC samples grown on 6H-SiC substrates by sublimation epitaxy have been investigated. From low temperature...

Authors: Milena Beshkova, Jean Lorenzzi, Nikoletta Jegenyes, Jens Birch, Mikael Syväjärvi, Gabriel Ferro, Rositza Yakimova

Abstract: 3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000°C, on different types of on-axis 6H-SiC(0001)...

Authors: Bharat Krishnan, Siva Prasad Kotamraju, Siddarth G. Sundaresan, Yaroslav Koshka

Abstract: Growth of SiC nanowires on commercial 4H-SiC substrates by chemical vapor deposition is reported. The main objective was to explore a...

Authors: Paul B. Klein

Abstract: The identification of defects limiting the carrier lifetime in n- epilayers of 4H-SiC is reviewed. The dominant electron traps, the Z1/2...

Authors: Toshihiko Hayashi, Katsunori Asano, Jun Suda, Tsunenobu Kimoto

Abstract: Temperature and injection level dependencies of carrier lifetimes in p-type and n-type 4H-SiC epilayers have been investigated. The carrier...

Authors: Paul B. Klein, Rachael L. Myers-Ward, Kok Keong Lew, Brenda L. VanMil, Charles R. Eddy, D. Kurt Gaskill, Amitesh Shrivastava, Tangali S. Sudarshan

Abstract: The temperature dependence of the carrier lifetime was measured in n-type 4H-SiC epilayers of varying Z1/2 deep defect concentrations and...


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