Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata, Masahiro Nagano, Tetsuya Miyazawa, Notihiro Hoshino

Abstract: Fast and thick 4H-SiC epitaxial growth is demonstrated in a vertical-type reactor under a low system pressure within the range 13-40 mbar. A...

Authors: Jawad ul Hassan, Peder Bergman, Justinas Palisaitis, Anne Henry, Patrick J. McNally, S. Anderson, Erik Janzén

Abstract: Homoepitaxial growth has been performed on 3” Si-face on-axis 4H–SiC substrates using standard gas system in a horizontal Hot-wall chemical...

Authors: Christian Hecht, René A. Stein, Bernd Thomas, Larissa Wehrhahn-Kilian, Jonas Rosberg, Hiroya Kitahata, Frank Wischmeyer

Abstract: In this paper, we present first results of epitaxial layer deposition using a novel warm-wall CVD multi-wafer system AIX 2800G4 WW from...

Authors: Anne Henry, Stefano Leone, Sven Andersson, Olof Kordina, Erik Janzén

Abstract: A chloride-based CVD process has been studied in concentrated growth conditions. A systematic study of different carrier flows and pressures...

Authors: Kazutoshi Kojima, Sachiko Ito, Junji Senzaki, Hajime Okumura

Abstract: We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the...

Authors: Siva Prasad Kotamraju, Bharat Krishnan, Yaroslav Koshka

Abstract: Thick 4H-SiC epitaxial layers have been grown using a combination of two chlorinated precursors silicon tetrachloride (SiCl4) and...

Authors: Stefano Leone, Anne Henry, Olof Kordina, Erik Janzén

Abstract: Chloride-based growth on on-axis SiC substrates has been studied at higher temperature than typical CVD conditions. The use of chlorinated...

Authors: Siva Prasad Kotamraju, Bharat Krishnan, Galyna Melnychuk, Yaroslav Koshka

Abstract: Chlorinated silicon precursor SiCl4 was investigated as an alternative to SiH4 with HCl addition as a source of additional chlorine in order...

Authors: Kenji Momose, Michiya Odawara, Yutaka Tajima, Hiroo Koizumi, Daisuke Muto, Takayuki Sato

Abstract: We developed a production technology for epitaxial growth with a smooth surface morphology for 4º off Si-face 4H-SiC epitaxial layers on 100...

Authors: Takashi Aigo, Hiroshi Tsuge, Hirokatsu Yashiro, Tatsuo Fujimoto, Masakazu Katsuno, Masashi Nakabayashi, Taizo Hoshino, Wataru Ohashi

Abstract: The epitaxial growth process was optimized in order to obtain good surface morphology for epilayers grown on 4˚ off-axis substrates. The...


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