Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: Qing Chun Jon Zhang, Anant K. Agarwal, Albert A. Burk, Michael J. O'Loughlin, John W. Palmour, Robert E. Stahlbush, Charles Scozzie

Abstract: The influence of stacking fault (SF) generation on the reverse blocking characteristics has been investigated on SiC 10 kV, 5 A Merged PiN...

Authors: Jean Luc Demenet, Madyan Amer, Alexandre Mussi, Jacques Rabier

Abstract: Results of deformation experiments on 4H-SiC single crystals below the usual brittle to ductile transition temperature are reported and...

Authors: Takamitsu Kawahara, Naoki Hatta, Kuniaki Yagi, Hidetsugu Uchida, Motoki Kobayashi, Masayuki Abe, Hiroyuki Nagasawa, Bernd Zippelius, Gerhard Pensl

Abstract: The correlation between leakage current and stacking fault (SF) density in p-n diodes fabricated on 3C-SiC homo-epitaxial layer is...

Authors: Bernd Zippelius, Michael Krieger, Heiko B. Weber, Gerhard Pensl, Hiroyuki Nagasawa, Takamitsu Kawahara, Naoki Hatta, Kuniaki Yagi, Hidetsugu Uchida, Motoki Kobayashi

Abstract: A large leakage current (IR) is observed at reverse bias (VR) in 3C-SiC p+-n diodes. This leakage current is caused by a high density of...

Authors: Teddy Robert, Maya Marinova, Sandrine Juillaguet, Anne Henry, Efstathios K. Polychroniadis, Jean Camassel

Abstract: A new type of 6H zigzag faults has been identified from high resolution transmission electron microscopy (HRTEM) measurements performed on...

Authors: Yukari Ishikawa, Yoshihiro Sugawara, Hiroaki Saitoh, Katsunori Danno, Yoichiro Kawai, Noriyoshi Shibata, Tsukasa Hirayama, Yuichi Ikuhara

Abstract: The structures of defects that form different types of etch pits on highly N-doped 4H-SiC substrates, that were produced by a sublimation...

Authors: Rii Hirano, Michio Tajima, Kohei M. Itoh

Abstract: We investigated the optical properties of stacking faults (SFs) in cubic silicon carbide by photoluminescence (PL) spectroscopy and mapping....

Authors: Joanna Wasyluk, Tatiana S. Perova, Sergey A. Kukushkin, Andrey V. Osipov, Nikolay A. Feoktistov, Sergey A. Grudinkin

Abstract: Raman spectroscopy was applied to investigate a series of SiC films grown on Si and 6H-SiC substrates by a new method of solid gas phase...

Authors: Kazuaki Seki, Kai Morimoto, Toru Ujihara, Tomoharu Tokunaga, Katsuhiro Sasaki, Kotaro Kuroda, Yoshikazu Takeda

Abstract: 6H-SiC hetero-epitaxially grown on a (111) 3C-SiC was observed with TEM. High-density stacking faults were formed around the...

Authors: Maya Marinova, Alkyoni Mantzari, Milena Beshkova, Mikael Syväjärvi, Rositza Yakimova, Efstathios K. Polychroniadis

Abstract: In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high...


Showing 81 to 90 of 300 Paper Titles