Silicon Carbide and Related Materials 2009

Volumes 645-648

doi: 10.4028/

Paper Title Page

Authors: Jolanta Borysiuk, Rafał Bożek, Wlodek Strupiński, Jacek M. Baranowski

Abstract: Transmission Electron Microscopy (TEM) investigations of graphene layers synthesized on Si and C-terminated on-axis oriented 4H-SiC are...

Authors: Nicolas Camara, Alessandra Caboni, Jean Roch Huntzinger, Antoine Tiberj, Narcis Mestres, Phillippe Godignon, Jean Camassel

Abstract: Epitaxial graphene growth is significantly different depending on the polarity of the 6H-SiC surface: Si- or C-face. On the Si-face, a...

Authors: Abdelkarim Ouerghi, Marc Portail, A. Kahouli, L. Travers, Thierry Chassagne, Marcin Zielinski

Abstract: This article explores the formation of graphene layers on 3C-SiC(111) epilayers grown on silicon substrates using thermal annealing under...

Authors: Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, C. Mark Johnson

Abstract: Few Layers Graphene (FLG) films were grown on the carbon-terminated surface of 4H-SiC from nickel silicide supersaturated with carbon. The...

Authors: Ameer Al-Temimy, Christian Riedl, Ulrich Starke

Abstract: By carbon evaporation under ultrahigh vacuum (UHV) conditions, epitaxial graphene can be grown on SiC(0001) at significantly lower...

Authors: Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase

Abstract: Epitaxial graphene growth on SiC is investigated using low-energy electron microscopy (LEEM) and first-principles calculations. LEEM is one...

Authors: Jonas Röhrl, Martin Hundhausen, Florian Speck, Thomas Seyller

Abstract: The phonon frequencies of epitaxial graphene on silicon carbide (SiC) depend on mechanical strain and charge transfer from the substrate to...

Authors: Sushant Sonde, Filippo Giannazzo, Jean Roch Huntzinger, Antoine Tiberj, Mikael Syväjärvi, Rositza Yakimova, Vito Raineri, Jean Camassel

Abstract: Epitaxial graphene was grown on the surface of on-axis and off-axis SiC (0001) by solid state graphitization at high temperatures (2000 °C)...

Authors: Susumu Kamoi, Noriyuki Hasuike, Kenji Kisoda, Hiroshi Harima, Kouhei Morita, Satoru Tanaka, Akihiro Hashimoto

Abstract: We report microscopic Raman scattering studies of epitaxial graphene grown on SiC substrates using a deep-ultraviolet (UV) laser excitation...

Authors: Aneta Drabińska, Jolanta Borysiuk, Wlodek Strupiński, Jacek M. Baranowski

Abstract: Optical transmission and transmission electron microscopy studies of epitaxial graphene structures grown on the carbon terminated face of...


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